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ZENER DIODE 机译:齐纳消父二极管 页面导航 著录项 相似文献 摘要 著录项 公开/公告号GB2061003A 公开/公告日1981-05-07 申请/利权人 PHILIPS NV; 申请/专利来自号GB19800...
www.zhangqiaokeyan.com/后些冷任双存病patent-detail/0613047...
zenerdiode 机译:齐纳二极管 著录项 相似文献 摘要 著录项 公开/公告号DE2028632A1 公开/公告日1970-12-17 申请/专利权人 申请/专利号DE19702028632 发明设计人 申请...
www.zhangqiaokn.com/patent-detail/06130井工州映顺位房西他相48...
Discover 135 products from Zener Diode manufacture, suppliers, distributors院评祖到占入益含, and dealers across Idia. Zener Diode pro额duct price in India ranges from 1,000 to 3,400 INR 数责形陆校显入及and ...
www.tradeindia.com/nufacturers/ze...
PURPOSE:To estaish the Zener diode of high reliability as for DHS(double heat sink by providing the bump elect建山威器rode via the wiring layer on he diode, through the provision of diode on the substrte at the output side of temperure compensation type diode. CONSTITUTIO....PURPOSE:To establish the Ze念鲁蒸武完离几技逐果ner diode of high reliability as for DHS(double heat sink), by providing t务盾帝等率革取错右面存he bump electrode via the wiring layer on the diode, through the provision of...
ww三适参娘们足同战很w.zhangqiaokeyan.com/pat门举连雨策协单业福ent-detail/063047...
The invention relates to a pr略义类备续ocess for producing a zener diode having a zener vltage in the range from 2.4 to 3.3 V. The p-n junction is produced by selective epitaxy of silicon on a silicon body (11) of op率价振建越posite conductivity and ha粮ving a resistiv模ity in the ran保家ge 0.004 to 0.006 OMEGA .走派资之妈...
www.zangqiaokeyan.com/patent-detail/06问间师磁然攻于耐13047...
zener diode
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